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%----------------------------------------DOCUMENT CLASS
\documentclass[11pt,a4paper]{article}
%----------------------------------------PACKAGES
\usepackage[T1]{fontenc}
\usepackage[latin1]{inputenc}
\usepackage{amsmath}
\usepackage{graphics}
\usepackage{multirow}
\usepackage[usenames,dvipsnames]{color}
\usepackage{calc}
%-----------------------------------------DECLARATIONS
\definecolor{lightgray}{gray}{0.95}
%-----------------------------------------BEGIN DOCUMENT
\begin{document}
\begin{flushleft}
%------------------------------------------PURPOSE
\section{Purpose:}
This experiment's purpose is to introduce the pn Junction diode. We will observe the voltage-current relationship of the pn Junction and how temperature effects that relationship.
%-------------------------------------------EXPERIMENTAL PROCEDURES
\section{Experimental Procedures:}
%-------------------------------------------TASK1
\subsection{Task 1:}
\subsubsection{Analysis:}
Task 1 required us to design the circuit below and observe the current and voltage characteristics of the silicon diode 1N916. We changed the values for the resistor between 1M$\Omega$ , 100k$\Omega$, 10k$\Omega$ and 1k$\Omega$ and varied the voltage between 1.5, 2.3V, 3.6V and 6V.
\subsubsection{Data and Calculation:}
%------------------------------------Silicon Diode Table of Voltages and Currents
\begin{center}
\begin{tabular}{|r|c|c|c|}
\hline
& $V_{S}$ & $V_{D}$ & $I_{D}$\\ \hline
\multirow{4}{*}{1M$\Omega$} & 1.5 V & 0.287 V & 1.25 $\mu$A \\
& 2.3 V & 0.313 V & 2.08 $\mu$A \\
& 3.4 V & 0.337 V & 3.32 $\mu$A \\
& 6.0 V & 0.366 V & 5.83 $\mu$A \\\hline
\multirow{4}{*}{100k$\Omega$} & 1.5 V & 0.405 V & 11.8 $\mu$A \\
& 2.3 V & 0.430 V & 19.4 $\mu$A \\
& 3.4 V & 0.455 V & 32.5 $\mu$A \\
& 6.0 V & 0.497 V & 57.5 $\mu$A \\\hline
\multirow{4}{*}{10k$\Omega$} & 1.5 V & 0.525 V & 99.0 $\mu$A \\
& 2.3 V & 0.554 V & 164 $\mu$A \\
& 3.4 V & 0.571 V & 285 $\mu$A \\
& 6.0 V & 0.605 V& 0.552 mA \\\hline
\multirow{4}{*}{1k$\Omega$} & 1.5 V & 0.631 V & 0.856 mA \\
& 2.3 V & 0.664 V & 1.59 mA \\
& 3.4 V & 0.685 V & 2.76 mA \\
& 6.0 V & 0.717 V & 4.95 mA \\\hline
\end{tabular}
\end{center}
\[\text{Silicon Diode - 1N916}\]
\begin{figure}[h]
\centering
\scalebox{0.45}{\includegraphics{realSiliconDiodeLab1jpeg.jpeg}}
\caption{Diode Voltage vs Diode Current - Silicon Diode 1N916}
\end{figure}
\subsubsection{Results:}
We notice that the Voltage Current relation for the pn Junction under forward bias resembles an exponential function.
%-------------------------------------------------------------TASK 2
\subsection{Task 2:}
\subsubsection{Analysis:}
Task 2 had us perform the same procedures done in task 1 except we replaced the silicon diode 1N916 with the Germanium diode 1N34 and we measured the reverse saturation current as well.